This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base
The 2SC1061 is a NPN Power Transistor in To-220 package. It has a DC current gain from 35 to 320 and transition frequency of 5MHz. It is commonly used in high power amplifier application along with its complementary PNP part 2SA671.
The low level triggers the relay module's power indicator (green) and the 4-way relay status indicator (red). User-friendly interface design, all interfaces can be directly connected through the terminal leads. Four fixing bolt holes are provided.
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