The 2N2222, PN2222A, MMBT2222A is the SMD (SOT-23) version of the popular 2N2222A Transistor. It has a collector current of 0.8A and Collector Emitter voltage of 60V. This Transistor is commonly used in low power switching devices where space is a constra
The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon 60V 600mA 400mW PNP epitaxial planar transistors designed for small signal, general purpose switching applications.
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N3906 Is 40V 200mA 625mW PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications
The 2N5401 TO-92 Bipolar Transistors PNP 160V 600mA. 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications, TO-92 Bipolar Transistors PNP 160V 600mA.
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N5551 TO-92 NPN High Voltage Transistor 160V 0.6A. NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401.
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base