Description
2N2646 is mainly used for designing firing circuits (for Silicon Controlled Rectifiers) and not used for amplifier circuits like transistors. The device is preferred in other applications where guaranteed minimum pulse amplitude is required and also where a low emitter leakage current and a low peak point emitter current (trigger current) are required. 2N2646 applications can be found in many low cost industrial applications.
2N2646 is general purpose silicon PN Unijunction Transistor that is designed for general purpose industrial applications. The device is popular as a triggering device and is not suited for driving power loads.
Features:
  1. Available as “HR” (high reliability)
  2. Available as non-RoHS (Sn/Pb plating)
  3. Low emitter reverse current: 0.005µA (Type)
  4. PASSIVATED surface for reliability and uniformity
  5. Maximum voltage between two bases (VB2B1): 35V
  6. Maximum emitter reverse voltage (VB2E): 30V
  7. Maximum RMS emitter current (Ie): 50mA
  8. Maximum peak emitter current (Ie): 2A
  9. Operating temperature range: -65ºC to +150ºC
  10. Maximum power dissipation : 300mW
How to use:  2N2646 has many application circuits but for understanding the working let us consider the relaxation oscillator circuit of the device.
Packing List:
  1. 2N2646 30V 2A 300mW Unijunction Transistor * 1Pc
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