The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N3906 Is 40V 200mA 625mW PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base
The 2SA1013, 2SA-1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.
The 2SC1383, C1383, 1383 is a 30V 1.5A Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683.
Reviews
There are no reviews yet.