2SC3679 900V 5A NPN Power Transistor

The 2SC3679 is a Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor). High Collector-Emitter Breakdown Voltage 800V(Min) High Speed Switching, High Reliability, Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Specifications:

1. Type Designator: 2SC3679
2. Material of transistor: Si
3. Polarity: NPN
4. Maximum collector power dissipation (Pc), W: 100
5. Maximum collector-base voltage |Ucb|, V: 900
6. Maximum collector-emitter voltage |Uce|, V: 800
7. Maximum emitter-base voltage |Ueb|, V: 5
8. Maximum collector current |Ic max|, A: 5
9. Maximum temperature (Tj), °C: 125
10. Transition frequency (ft), MHz:
11. Collector capacitance (Cc), pF:
12. Forward current transfer ratio (hFE), min: 80
13. Noise Figure, dB: –
14. Package of 2SC3679 Transistor: TO218

Packing List:

1Pc * 2SC3679 900V 5A NPN Power Transistor