2N2907A 60V 600mA PNP BJT Transistor

This is a Bipolar PNP transistor available in metal can package, having a high value of current 600mA with low voltage of 40v. The condition of being forward biased is when the base connected to the ground or having no supply on it, and as a signal is provided to base pin it goes reverse biased. The transistor is having DC current gain value of 100 to 300 which shows the amplification capacity of the transistor. As it is used for the amplification and switching.

When the transistor is fully biased, it allows a maximum of 500mA current through the collector and provide a voltage (collector to emitter) of 1.6v (max.), this is the Saturation region of the transistor. While the base current is removed the transistor is in off state it’s in Cut-off region.

Specifications:

1. Having a high value of current (max. 600 mA)
2. Low voltage value (max. 40 V)
3. Comes in different type of packages – TO-92, TO-18
4. These are Lead (Pb) free devices
5. Collector to Emitter voltage (VCEO) is 40v (max.)
6. Collector to Base voltage (VCBO) is 60v (max.)
7. Emitter to Base voltage(VEBO) is 5v (normally)
8. Maximum value of Collector current is 600mA
9. Power dissipation at ambient temperature is about 400mW
10. Having DC current gain (hfe) of 100 to 300 (max.)
11. Temperature of operation and storage is -65 to +150 °C

Note: Complete technical information can be found in the 2N2907 Datasheet, linked at the upper of this page.

Applications:

1. Where amplification of low power is needed we use this transistor.
2. It can also be used in the various switching applications.
3. Used for making siren or dual Led or Lamp flasher.
4. Can be used in Darlington Pair.

Packing List:

1Pc * 2N2907A 60V 0.6A PNP BJT Transistor