The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in TO126. The complementary PNP type is MJE350.
The MJE350 is a silicon planar PNP transistor intended for use in medium power linear and switching applications. It is mounted in TO-126. The complementary NPN type is MJE340.
The MJH6284G, MJH6284, 6284 is a – 100V 20A 4MHz 160W NPN - Darlington Bipolar Transistor Through Hole TO-218 from ON Semiconductor. MJH6284(NPN), MJH6287(PNP) Darlington Complementary Silicon Power Transistors.
The MJH6287G, MJH-6287, 6287 is a 100V 20A 4MHz 160W–PNP - Darlington Bipolar Transistor Through Hole TO-218 from ON Semiconductor. MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors.
PIC12F675-I/P 4MHz 1kbyte Flash Microcontroller ICs The PIC12F675-I/P is a powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single
The IRF9640 is a 200V 11A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.
The RU3060L is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications.