The IRF830PBF is a 500V 4.5A 100W TO-220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF840PBF is a 500V 8A 125W TO220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF840PBF is a 500V 8A 125W TO220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF9530 is a 100V 23A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.
The IRF9Z34 is a 60V 18A Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
The IRFI740G is an N-Channel MOSFET from International Rectifier. It has maximum VDSS rated at 10V and can handle continuous drain current up to 5.4A at 150C. The IRFI740G is a 400V 5.4A 40W TO220F Plastic Package 3Pins Power MOSFET.
The IRFP054 is a 55V 80A 240W Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRFP064N is a 60V 70A Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provide
IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition to the quick switching speed and ru