MIP0227SY 700V SILICON MOS FET POWER AMPLIFIER 142-163MHz 7W FM PORTABLE RADIO. ... SILICON MOS FET POWER AMPLIFIER 896-941MHz 3W FM PORTABLE RADIO. ... Silicon P Channel MOS FET High Speed Power Switching.
The MIP3E3MY electronic component is brought into production by PANASONIC, included in Transistors. Each device is available in a small TO-220 package and specified over the extended temperature range of -40°C to 105°C (TA).
The MJ802G MJ802 802 is a 100V 30A 200W transistor, Use for as an output device in complementary audio amplifiers to 100−Watts music power per channel.
The MJE13003 is a 1.5A, 400V NPN Bipolar Power Transistor is designed for high voltage power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE application.
The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode application.