Description

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

 

Specifications:

 

  1. EU RoHS – Compliant
  2. Product Category – Power MOSFET
  3. Configuration – Single
  4. Channel Mode – Enhancement
  5. Channel Type – N-Channel
  6. Number of Elements per Chip – 1
  7. Maximum Drain Source Voltage (V) – 75
  8. Maximum Gate Source Voltage (V) – ±20
  9. Maximum Continuous Drain Current (A) – 120
  10. Maximum Drain Source Resistance (mOhm) – 7.5@10V
  11. Typical Gate Charge @ Vgs (nC) – 160@10V
  12. Typical Gate Charge @ 10V (nC) – 160
  13. Typical Input Capacitance @ Vds (pF) – 5000@25V
  14. Maximum Power Dissipation (mW) – 310000
  15. Minimum Operating Temperature (°C) – -55
  16. Maximum Operating Temperature (°C) – 175
  17. Typical Turn-On Delay Time (ns) – 30
  18. Typical Turn-Off Delay Time (ns) – 130
  19. Typical Fall Time (ns) – 90
  20. Typical Rise Time (ns) – 140
  21. Mounting – Through Hole
  22. Package Height (mm) – 9.15(Max)
  23. Package Length (mm) – 10.4(Max)
  24. Package Width (mm) — 4.6(Max)
  25. Standard Package Name — TO-220
  26. Supplier Package  — TO-220
  27. Pin Count — 3
  28. Lead Shape — Through Hole

 

Applications:

 

  • Switching application

 

Packing List:

 

  • 2Pcs x STP140NF75 75V 130A N-Channel Power MOSFET.
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