IRFP250 MOSFET N-Channel 200V 33A
121৳
IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition to the quick switching speed and ru
Description
IRFP250M uses cutting-edge processing methods to provide extraordinarily low on-resistance per silicon area. This feature gives the designer a highly effective and dependable device for various applications, in addition to the quick switching speed and rugged design that IR MOSFETTM devices are renowned for.
Features:
- Drain-Source Volt (Vds): 200V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 33A
- Power Dissipation (Ptot): 180W
- Type: N-Channel
Packing List:
- 1Pc * IRFP250 MOSFET N-Channel 200V 33A
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