SI9945B 60V 5.3A N-Channel Dual MOSFET

These N-Channel Dual MOSFET 60V 4.3A 2W 58mohm @ 10V Enhancement Mode MOSFETs are produced using Fairchild Semiconductors advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Specifications:

1. Manufacturer:Vishay
2. Product Category:MOSFET
3. RoHS:RoHS Compliant By Exemption Details
4. Brand:Vishay Semiconductors
5. Mounting Style:SMD/SMT
6. Package / Case:SOIC-Narrow-8
7. Number of Channels:2 Channel
8. Transistor Polarity:N-Channel
9. Vds – Drain-Source Breakdown Voltage:60 V
10. Id – Continuous Drain Current:4.3 A
11. Rds On – Drain-Source Resistance:58 mOhms
12. Vgs – Gate-Source Voltage:20 V
13. Maximum Operating Temperature:+ 150 C
14. Technology:Si
15. Packaging:Reel
16. Channel Mode:Enhancement
17. Configuration:Dual Dual Drain
18. Fall Time:10 ns
19. Minimum Operating Temperature:- 55 C
20. Pd – Power Dissipation:2 W
21. Rise Time:65 ns, 15 ns
22. Transistor Type:2 N-Channel
23. Typical Turn-Off Delay Time:15 ns, 20 ns
24. Typical Turn-On Delay Time:15 ns, 10 ns
25. Part # Aliases:SI9945BDY-GE3
26. Unit Weight: 0.006596 oz

Packing List:

• 1Pc * SI9945B 60V 5.3A N-Channel Dual MOSFET