SI4850 60V 6A N-Channel Dual MOSFET
180৳
The SI-4850EY, SI4850, 4850 is a 60V 6A N-Channel Dual MOSFET N-Channel MOSFET produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching perfo
Description
The SI4850EY is a 60V 6A N-Channel Dual MOSFET N-Channel MOSFET produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Specifications:
| FET Type | MOSFET N-Channel, Metal Oxide |
|---|---|
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current – Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) @ Vds | – |
| Power – Max | 1.7W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154″, 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Online Catalog | N-Channel Standard FETs |
| Other Names | SI4850EY-T1-E3TR |
Packing List:
1Pc * SI4850 60V 6A N-Channel Dual MOSFET.
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