IRF530N 100V 14A N-Channel Power MOSFET

The IRF530N is an advanced 100V 14A TO-220 Package, TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.

These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

Features:

1. Drain-Source Volt (Vds): 100V
2. Drain-Gate Volt (Vdg): 100V
3. Gate-Source Volt (Vgs): 20V
4. Drain Current (Id): 30A
5. Power Dissipation (Ptot): 150W
6. Type: N-Channel

Packing List:

1Pc * IRF530N 100V 14A N-Channel Power MOSFET