The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon 60V 600mA 400mW PNP epitaxial planar transistors designed for small signal, general purpose switching applications.
The 2N5401 TO-92 Bipolar Transistors PNP 160V 600mA. 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications, TO-92 Bipolar Transistors PNP 160V 600mA.
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N5551 TO-92 NPN High Voltage Transistor 160V 0.6A. NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401.
The low level triggers the relay module's power indicator (green) and the 4-way relay status indicator (red). User-friendly interface design, all interfaces can be directly connected through the terminal leads. Four fixing bolt holes are provided.
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