The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon 60V 600mA 400mW PNP epitaxial planar transistors designed for small signal, general purpose switching applications.
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N3906 Is 40V 200mA 625mW PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.
The 2SC1383, C1383, 1383 is a 30V 1.5A Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683.
The low level triggers the relay module's power indicator (green) and the 4-way relay status indicator (red). User-friendly interface design, all interfaces can be directly connected through the terminal leads. Four fixing bolt holes are provided.
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