The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
The 2N5401 TO-92 Bipolar Transistors PNP 160V 600mA. 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications, TO-92 Bipolar Transistors PNP 160V 600mA.
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N5551 TO-92 NPN High Voltage Transistor 160V 0.6A. NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401.
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base
The 2SA684, 2SA684-AP–Bipolar (BJT) Transistor PNP 50V 1A 200MHz 750mW Through Hole TO-92L. Pricing and Availability on 5000 almost of electronic components from BD-SpeedyTech.
The 2SC1383, C1383, 1383 is a 30V 1.5A Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683.
The 2SC2330 - C2330 NPN Epitaxial Silicon Transistor for Color TV Chroma Output. Collector-Emitter Volt (Vceo): 400V, Collector-Base Volt (Vcbo): 400V, Collector Current (Ic): 100mA, hfe: 40-80 @ 20mA.
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