The IXFN70N60, 70N60 is a N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits,
MIP0227SY 700V SILICON MOS FET POWER AMPLIFIER 142-163MHz 7W FM PORTABLE RADIO. ... SILICON MOS FET POWER AMPLIFIER 896-941MHz 3W FM PORTABLE RADIO. ... Silicon P Channel MOS FET High Speed Power Switching.
The MIP3E3MY electronic component is brought into production by PANASONIC, included in Transistors. Each device is available in a small TO-220 package and specified over the extended temperature range of -40°C to 105°C (TA).
The IRF9640 is a 200V 11A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.
The RU3060L is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications.
The SI4450DY, SI4450, SI-4450,4 450 is a 60V 7.5A 2.5W This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance & yet maintain superior switching
The SI-4850EY, SI4850, 4850 is a 60V 6A N-Channel Dual MOSFET N-Channel MOSFET produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching perfo
The SI-9945DY, SI9945, 9945 is a N-Channel Dual MOSFET 60V 4.3A 2W 58mohm 10V Enhancement Mode MOSFETs are produced using advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.