IRF3808 75V 140A Single N-Channel HEXFET Power MOSFET in a TO-220. This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area
The IRF5210 is a 100V 40A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d
The IRF540N is a 100V 30A To-220 Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRF640N is a200V 18A TO-220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRF740PBF is a 400V 10A 125W TO220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF830PBF is a 500V 4.5A 100W TO-220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF840PBF is a 500V 8A 125W TO220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF840PBF is a 500V 8A 125W TO220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The IRF9530 is a 100V 23A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.
The IRF9Z34 is a 60V 18A Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
The IRFI740G is an N-Channel MOSFET from International Rectifier. It has maximum VDSS rated at 10V and can handle continuous drain current up to 5.4A at 150C. The IRFI740G is a 400V 5.4A 40W TO220F Plastic Package 3Pins Power MOSFET.