The 2SD1947, 2SD-1947, D1947, 1947 is a 100V 10A NPN Silicon Transistor, TO-220F Package , Applications High Gain current, low Uce Voltage Saturation, Integrated Diode, Manufactured By TOSHIBA.
The RU3060L is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications.
The 2SK2372, 2SK-2372, K2372, 2372 is a N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 2SK2368: RDS(ON) = 0.27 (VGS = 10 A) Low Ciss 3600 pF TYP. High Avalanche Capability Ratings.
PIC12F675-I/P 4MHz 1kbyte Flash Microcontroller ICs The PIC12F675-I/P is a powerful (200 nanosecond instruction execution) yet easy-to-program (only 35 single
The DS1230Y-100+ is 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tol
The 2SD400 2SD-400 D400 D-400 is a NPN Transistor 25V 1A 0.9W Triode Transistor TO-92L Package Silicon NPN Low Frequency Power Transistor. NPN Epitaxial Planar Silicon Transistor Absolute Maximum Ratings at Ta = 25’C.