2SK2372 500V 25A N-Channel Power MOSFET
90৳
The 2SK2372, 2SK-2372, K2372, 2372 is a N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 2SK2368: RDS(ON) = 0.27 (VGS = 10 A) Low Ciss 3600 pF TYP. High Avalanche Capability Ratings.
Description
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 2SK2368: RDS(ON) = 0.27 (VGS = 10 A) Low Ciss 3600 pF TYP. High Avalanche Capability Ratings.
Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 °C) Total Power Dissipation (Ta = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current.
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device..
Specifications:
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 500 V | |
Current – Continuous Drain (Id) @ 25°C | 25A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 270mOhm @ 13A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 10 V | |
FET Feature | – | |
Power Dissipation (Max) | 3W (Ta), 160W (Tc) | |
Operating Temperature | 150°C | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-3P |
Packing List:
1Pc * 2SK2372 500V 25A N-Channel Power MOSFET.
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