2SD1947 Transistor 40W 100V 10A

The 2SD1947 is a 100V 10A NPN Silicon Transistor, TO-220F Package , Applications High Gain current, low Uce Voltage Saturation, Integrated Diode, Manufactured By TOSHIBA.

Specifications:

1. Type Designator: 2SD1947
2. Material of transistor: Si
3. Polarity: NPN
4. Maximum collector power dissipation (Pc), W: 40
5. Maximum collector-base voltage |Ucb|, V: 100
6. Maximum collector-emitter voltage |Uce|, V: 100
7. Maximum emitter-base voltage |Ueb|, V: 7
8. Maximum collector current |Ic max|, A: 10
9. Maximum temperature (Tj), °C: 150
10. Transition frequency (ft), MHz: 70
11. Collector capacitance (Cc), pF: 160
12. Forward current transfer ratio (hFE), min: 500
13. Noise Figure, dB: –
14. Package of 2SD1947 transistor: TO220F

Packing List:

1Pc * 2SD1947 100V 10A NPN Power Transistor