IRF640N 200V 18A N-Channel Power MOSFET
67৳
The IRF640N is a200V 18A TO-220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRF640N is a200V 18A TO-220AB Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features:
- Drain-Source Volt (Vds): 200V
- Drain-Gate Volt (Vdg): 200V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 18A
- Power Dissipation (Ptot): 125W
- Type: N-Channel
Packing List:
1Pc * IRF640N 200V 18A N-Channel Power MOSFET
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