FX20KMJ High-speed Power MOS FET

High-speed Switching Use Pch Power MOS FET.

Drive voltage 4 V VDSS ­150 V rDS(ON) (max) ­20 A Integrated Fast Recovery Diode (TYP.) 100 ns Viso 2000 V

Applications:
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso Ratings 2000 2.0 Unit V g Conditions VGS 0 V VDS 0 V

Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min ­150 ­1.3 Typ Max Unit ns V °C/W ns Test Conditions = ­1 mA, VGS 0 V VGS ±20 V, VDS 0 V VDS ­150 V, VGS = ­1 mA, VDS ­10 A, VGS ­10 A, VGS ­10 A, VGS ­10 A, VDS ­10 V VDS ­10 V, VGS = 1MHz VDD ­10 A, VGS ­10 V, RGEN = RGS ­10 A, VGS 0 V Channel to case ­20 A, dis/dt = 100 A/µs