The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N3906 Is 40V 200mA 625mW PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N6107, 2N-6107, 6107 is a 70V 7A PNP Silicone Power Transistor, designed for use in general purpose amplifiers and switching applications TO-220A/B Package.
The 2SA-1266, 2SA1266-Y is 50V 150mA 400mW PNP Bipolar Transistor, manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor.
The 2SC2330 - C2330 NPN Epitaxial Silicon Transistor for Color TV Chroma Output. Collector-Emitter Volt (Vceo): 400V, Collector-Base Volt (Vcbo): 400V, Collector Current (Ic): 100mA, hfe: 40-80 @ 20mA.
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