The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.
The 2SA-1266, 2SA1266-Y is 50V 150mA 400mW PNP Bipolar Transistor, manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor.
The 2SC1383, C1383, 1383 is a 30V 1.5A Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683.
The 2SC2330 - C2330 NPN Epitaxial Silicon Transistor for Color TV Chroma Output. Collector-Emitter Volt (Vceo): 400V, Collector-Base Volt (Vcbo): 400V, Collector Current (Ic): 100mA, hfe: 40-80 @ 20mA.
Reviews
There are no reviews yet.