The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.
The 2SA-1266, 2SA1266-Y is 50V 150mA 400mW PNP Bipolar Transistor, manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor.
The 2SA684, 2SA684-AP–Bipolar (BJT) Transistor PNP 50V 1A 200MHz 750mW Through Hole TO-92L. Pricing and Availability on 5000 almost of electronic components from BD-SpeedyTech.
The 2SC1061 is a NPN Power Transistor in To-220 package. It has a DC current gain from 35 to 320 and transition frequency of 5MHz. It is commonly used in high power amplifier application along with its complementary PNP part 2SA671.
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