BS170 60V 500mA N-Channel Switching MOSFET

The BS170 is an N−Channel enhancement mode field effect transistors are produced using ON Semiconductor proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features:

1. Drain-Source Volt (Vds): 60V
2. Gate-Source Volt (Vgs): 25V
3. Drain Current (Id): 0.5A
4. Drain-Source On Resistance (Rds): 5ohm
5. Power Dissipation (Ptot): 0.35W
6. Gate-Source Threshold Voltage (Vgst): 3V
7. Type: N-Channel

Packing List:

2Pcs * BS170 60V 500mA N-Channel Switching MOSFET