This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N5401 TO-92 Bipolar Transistors PNP 160V 600mA. 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications, TO-92 Bipolar Transistors PNP 160V 600mA.
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.
The 2SC2330 - C2330 NPN Epitaxial Silicon Transistor for Color TV Chroma Output. Collector-Emitter Volt (Vceo): 400V, Collector-Base Volt (Vcbo): 400V, Collector Current (Ic): 100mA, hfe: 40-80 @ 20mA.
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