2SK3550-01 High Voltage Power Mosfet

The 2SK3550-01MR is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:

1. Advanced Process Technology
2. Fast Switching
3. Fully Avalanche Rated
4. Lead-Free

Specifications:

1. Number of Channels 1 Channel
2. Transistor Polarity N-Channel
3. Drain-Source Breakdown Voltage (Vds) 900V
4. Collector Current (Ic) 10A
5. Drain-Source Resistance (Rds On) 1.4Ohms
6. Gate-Source Voltage (Vgs) 30V
7. Configuration Single
8. Operating Temperature Range -55 – 150°C
9. Power Dissipation (Pd) 130W
10. Package: TO-3PF

Packing List:

1Pc * 2SK3550 900V 10A N-Channel Power MOSFET