The 2N2369A is a silicon planar epitaxial NPN transistor TO-18 metal package. It is designed specifically for high-speed saturated switching applications at current levels from 100μA to 100 mA.
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon 60V 600mA 400mW PNP epitaxial planar transistors designed for small signal, general purpose switching applications.
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.
The 2N5401 TO-92 Bipolar Transistors PNP 160V 600mA. 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications, TO-92 Bipolar Transistors PNP 160V 600mA.
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.
The 2SC1061 is a NPN Power Transistor in To-220 package. It has a DC current gain from 35 to 320 and transition frequency of 5MHz. It is commonly used in high power amplifier application along with its complementary PNP part 2SA671.
The low level triggers the relay module's power indicator (green) and the 4-way relay status indicator (red). User-friendly interface design, all interfaces can be directly connected through the terminal leads. Four fixing bolt holes are provided.
Reviews
There are no reviews yet.