The 24L1025I/SN is a 128K x 8 (1024K bit) Serial Electrically Erasable PROM, capable of operation across a broad voltage range (1.8V to 5.5V). It has been developed for advanced, low-power applications such as communications or data acquisition.
The 2SK2372, 2SK-2372, K2372, 2372 is a N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 2SK2368: RDS(ON) = 0.27 (VGS = 10 A) Low Ciss 3600 pF TYP. High Avalanche Capability Ratings.
The BS250 is a P Channel enhancement mode vertical D-MOS transistor manufactured in TO-92 package. The pin configuration of the transistor is as follows: The first pin is Source, second pin is Gate and the third pin is Drain.
The 74HC86D, 7486D, HC86D are contain four independent 2-input exclusive-OR gates. They perform the Boolean function Y = A B or Y = AB + A(B) in positive logic. A common application is as a true/complement element.
The CD4020BM, CD4020BE, are ripple-carry binary counters. All counter stages are master-slave flip-flops state of a counter advances one count on the negative transition of each input pulse a high level on the RESET line resets the counter to its all zero
The BCX71 (BJW) is a PNP general purpose transistor SOT-23. Features. Low current (max. 100 mA) Low voltage (max. 45 V) Low noise. AEC-Q101 qualified. Target Applications
The HN58C1001FP is an electrically erasable and programmable ROM organized as 131072-word × 8- bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology.