The IRF3710 MOSFET is a Field Effect Transistor has a drain voltage of 100V, gate voltage of 20V and drain current of 57A. A MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor TO-220 Package.
The 2SC3209 is a NPN Maximum Collector 2W Maximum Collector Base Voltage 300 V Maximum Collector Current 0.2 A Max. Operating Junction Temperature 125 °C Transition Frequency 80 MHz Forward Current Transfer Ratio 60.
The 2SK2003, 2SK-2003, 2003 is a 600V 4A 40W N-Channel Power MOSFET, TO-220F Package, High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
The HA17741/PS is an internal phase compensation high-performance operational amplifier, that is appropriate for use in a wide range of applications in the test and control fields chips DIP-8 Pins Package.
The SI-4850EY, SI4850, 4850 is a 60V 6A N-Channel Dual MOSFET N-Channel MOSFET produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching perfo
The DG509ACJ is CMOS Monolithic 16-Channel Dual 8-Channel Analog Multiplexers, which can also be used as de-multiplexers. An enable input is provided. When the enable input is high a channel is selected by the address inputs and when low, all channels are