The DMG2302U-7 is 20V 4.2A 800 mW SOT23 Package. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
The 2SD882, 2SD-882, 882 is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.
The MJE13003 is a 1.5A, 400V NPN Bipolar Power Transistor is designed for high voltage power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE application.
The MJH6284G, MJH6284, 6284 is a – 100V 20A 4MHz 160W NPN - Darlington Bipolar Transistor Through Hole TO-218 from ON Semiconductor. MJH6284(NPN), MJH6287(PNP) Darlington Complementary Silicon Power Transistors.
The BD244C, BD-244, 244 is a 6A, 100V 65W PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.