2N3904 60V 200mA NPN General Purpose Transistor

3৳ 
This device is designed as a general−purpose amplifier and switch. The useful dynamic range extends to 60V 200mA 625mW as a switch and to 100MHz as an amplifier.

TIP142 NPN Darlington Transistor 100V 10A

120৳ 
The TIP140, TIP141 and TIP142 are 100V 10A 125W Silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 Package.

2SC828 25V 50mA General Purpose Transistor

3৳ 
The 2SC828 is an NPN, Silicon-based AF Amplifier Transistor that is mainly used in AF based audio equipment for amplification and switching. It has a Collector-Emitter Voltage of 25 Vdc with a Collector-Base voltage of 25 Vdc.

TIP32C 60V 3A PNP Power Transistors

20৳ 
The TIP32C is a base island technology NPN power transistor in TO-220 plastic package with better performances than the industry standard TIP32C that make this device suitable for audio, power linear and switching applications. The PNP type is TIP31C.

74LS574 Octal D-type Flip-Flop Edge-Triggered Tri-State

170৳ 
The SN74HC574N, SN74HCT574, SN74LS574N, SN74574 Are 8-bit positive-edge triggered D-type flip-flop with 3-state outputs. The device features a clock (CP) and output enable (OE) inputs.

S8050 40V 500mA NPN Switching Transistors

5৳ 
The S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. S8050 0.5A/40V NPN Transistor TO-92.

2SC3320 500V 15A 80W NPN Power Transistors

90৳ 
The 2SC3320 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of

BD242 3A 100V PNP Bipolar Power Transistor

40৳ 
The BD242C is a 3A 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.

2SK2545 600V 6A N-Channel Power MOSFET

45৳ 
The 2SK2545, 2SK-2545, K2545, 2545 is a N-channel MOSFET FAP-IIS Series 600V 0,9Ω 6A 40W, Outline Drawing-High Speed Switching-Low On-Resistance-No Secondary Breakdown-Low Driving Power MOSFET. TO-220F Package.