EG8010 Can achieve 50/60Hz pure sine wave with high accuracy, low harmonic and distortion by external 12MHz crystal oscillator. EG8010 is a CMOS IC that integrates SPWM sinusoid generator dead time control circuit.
The BC856 3B is a transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
The 2SK2098, 2SK-2098, K2098, 2098 is a 150V 0,08Ω 20A 50W -TO-220NIS Package, High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof.