The TIP36C is 100V 25A 125W manufactured in planar technology with base island layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
The 2N3906 Is 40V 200mA 625mW PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications
The IXFN70N60, 70N60 is a N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits,
The TIP145, TIP146 and TIP147 are 100V 10A 125W Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in TO-218 Package.