The TIP140, TIP141 and TIP142 are 100V 10A 125W Silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 Package.
The 2SD1947, 2SD-1947, D1947, 1947 is a 100V 10A NPN Silicon Transistor, TO-220F Package , Applications High Gain current, low Uce Voltage Saturation, Integrated Diode, Manufactured By TOSHIBA.
The FQP8N60, FQPF-8N60, 8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
The TPC8214H, TPC8214, TPC-8214, 8214 is a N-Channel MOSFET TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS)-SOP-8P.
EG8010 Can achieve 50/60Hz pure sine wave with high accuracy, low harmonic and distortion by external 12MHz crystal oscillator. EG8010 is a CMOS IC that integrates SPWM sinusoid generator dead time control circuit.
The 2SK2837, 2SK-2837, K2837, 2837 is a 500V 20A N Channel Silicon Field Effect Transistor Or MOFET TO-3PN-3 Package. Chopper Regulator, DC−DC Converter and Motor Drive.
The MJH6287G, MJH-6287, 6287 is a 100V 20A 4MHz 160W–PNP - Darlington Bipolar Transistor Through Hole TO-218 from ON Semiconductor. MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors.