The µPD4723 is a high-breakdown voltage silicon gate CMOS line driver/receiver based on the EIA/TIA-232-E standard. The internal DC/DC converter can switch between multiple voltages, allowing it to operate with a single +3.3 V or +5 V power supply.
The 2SK3515, 2SK-3515, K3515, 3515 is a 450V, 10A, 48W TO-220NIS Package MOSFET, The FUJI Electric manufacturer is a IC Chips with N CHANNEL SILICON POWER MOSFET for more details of 2SK3515 can be seen below.
The IRF5210 is a 100V 40A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d
The BD242C is a 3A 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.
The 2SC1061 is a NPN Power Transistor in To-220 package. It has a DC current gain from 35 to 320 and transition frequency of 5MHz. It is commonly used in high power amplifier application along with its complementary PNP part 2SA671.