The 2SK2372, 2SK-2372, K2372, 2372 is a N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 2SK2368: RDS(ON) = 0.27 (VGS = 10 A) Low Ciss 3600 pF TYP. High Avalanche Capability Ratings.
The voltage to pulse width modulation (PWM) can transform analog voltage into 0-100% PWM duty cycle output. The converted voltage range can be selected (using jumper) either to be from 0 to 5V or 0 to 10V.
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
The BC337 is an NPN transistor with a maximum gain of 630, commonly used in low power audio applications. It can also switch loads up to 45V and 800mA hence also used as general purpose transistor.
The IRFP064N is a 60V 70A Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
The device can effectively suppress the surge current, and its resistance and power consumption can be greatly reduced after that through the continuous effect of the current so as not to affect the normal work current. Therefore the Power NTC thermistor