The IXFN70N60, 70N60 is a N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI circuits,
These epitaxial planar transistors are mounted in the TO-126 plastic package. The PNP types are the BD136 and BD140, and the complementary NPN types are the BD135 and BD139.
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
The MJE350 is a silicon planar PNP transistor intended for use in medium power linear and switching applications. It is mounted in TO-126. The complementary NPN type is MJE340.
The 2SK2372, 2SK-2372, K2372, 2372 is a N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 2SK2368: RDS(ON) = 0.27 (VGS = 10 A) Low Ciss 3600 pF TYP. High Avalanche Capability Ratings.