The 2SD1947, 2SD-1947, D1947, 1947 is a 100V 10A NPN Silicon Transistor, TO-220F Package , Applications High Gain current, low Uce Voltage Saturation, Integrated Diode, Manufactured By TOSHIBA.
The CD4027BM is a single monolithic chip integrated circuit containing two identical complementary-symmetry J-K master-slave flip-flops. Each flip-flop has provisions for individual J, K, Set, Reset, and Clock input signals.
The MJE13003 is a 1.5A, 400V NPN Bipolar Power Transistor is designed for high voltage power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE application.
The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
The IRF3710 MOSFET is a Field Effect Transistor has a drain voltage of 100V, gate voltage of 20V and drain current of 57A. A MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor TO-220 Package.
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The 25LC1024I/P is a 1Mb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. This is organized as one block of 128K*8-bit optimized for use in consumer electronics, industrial, and automotive application.
This STP80PF55 P-Channel 55V - 0.016Ω - 80A P-Channel Power MOSFET - TO-220. This Power MOSFET is the least development of STMicroelectronics unique “Single feature size™” strip-based process.