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RU3060L 30V 60A SMD Mosfet TO-252

50৳

The RU3060L is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications.

D8253 24 Pin DIP

Components & IC, General IC

330৳

24 Pin DIP IC By NEC

BNO055 Intelligent 9Axis Attitude Sensor Module

Sensor & Modules, Sensor

2100৳

MCU-055 MCU+9DOF BNO055 Intelligent 9 Axis.

2SK2003 600V 4A N-Channel Power MOSFET

Components & IC, Mosfet / SCR / Triac

70৳

The 2SK2003, 2SK-2003, 2003 is a 600V 4A 40W N-Channel Power MOSFET, TO-220F Package, High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage - VGS = ± 30V

KSD302 250V 25A 270° Thermostat Switch

Sensor & Modules, Sensor, Tempereture

250৳

KSD-302 high-current thermostat is a thermostat that uses a bimetallic strip as a temperature sensing component. When the appliance is working normally, the bimetallic strip is in a free state and the contacts are in a closed/open state

74LS266 Quad 2-Input X-NOR

Components & IC, General IC

130৳

Quad 2-Input Exclusive-NOR Gate

TIP147 Transistor PNP Darlington 100V 10A

Components & IC, Transistor

120৳

The TIP145, TIP146 and TIP147 are 100V 10A 125W Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in TO-218 Package.

2N5551 160V 500mA NPN BJT Transistor

Components & IC, Transistor

5৳

The 2N5551 TO-92 NPN High Voltage Transistor 160V 0.6A. NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401.

IRF540N 100V 30A N-Channel Power MOSFET

Components & IC, Mosfet / SCR / Triac

83৳

The IRF540N is a 100V 30A To-220 Package Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRF3805PBF 55V 75A N-Channel Power MOSFET

Components & IC, Mosfet / SCR / Triac

130৳

This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

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