The 2SK2461, 2SK-2461, K2461, 2461 is a 100V 20A 35W N-Channel Field Effect Transistor TO-220NIS Package MOSFET, Its designed for high speed switching applications. Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A).
The voltage to pulse width modulation (PWM) can transform analog voltage into 0-100% PWM duty cycle output. The converted voltage range can be selected (using jumper) either to be from 0 to 5V or 0 to 10V.
The 2SC4977 is a 400V, 7A, Silicon NPN Power Transistor. A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material.
The 2SC3852 is a 60V 3A 15MHz 25W NPN Bipolar (BJT) Transistor Through Hole TO-220F Package Silicon NPN Epitaxial Planar Transistor(Driver for Solenoid and Motor, Series Regulator and General Purpose.
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wi
The IRF5210 is a 100V 40A Fifth Generation P-Channel HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d
RS485 port device parameter settings, data communication Short distance, such as parameter settings of the computer peripheral equipment, the use of common data lines can be. A and A port of the device when the wiring is connected, B and device B connecte