The 2SK2996 (Q), 2SK-2996, K2996, 2996 Is a Transistor MOSFET N-Channel Silicon 600V 10A 3-Pins (3+tab) TO-220F In The Fet Transistors, MOSFETs Category. Check Part Details, Parametric And Specifications
The 2N7000, 2N-7000, 7000 MOSFET Transistor has a drain voltage of 60V, gate voltage of 40V and a drain current of 200mA in a TO-92 case. A MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor.
The FQP20N60, FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
This HEXFET® Power MOSFET utilizes the latest ID = 75A processing techniques to achieve extremely low on-resistance per silicon area. This design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
IRF3205 is a high-current N-Channel MOSFET that can switch currents up to 110A and 55V. The specialty of the MOSFET is that it has a very low on resistance of only 8.0mΩ making it suitable for switching circuits like Inverters, motor speed control, DC-DC
The CD4021BM series types are supplied in 16-lead hermetic dual-in-line ceramic packages (D and F suffixes), 16-lead dual-in-line plastic packages (E suffix), and in chip form (H suffix).
The 74HC86D, 7486D, HC86D are contain four independent 2-input exclusive-OR gates. They perform the Boolean function Y = A B or Y = AB + A(B) in positive logic. A common application is as a true/complement element.