IRFB4110 100V 180A N-Channel Power MOSFET

The IRFB4110PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Features:

1. Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
2. Fully Characterized Capacitance and Avalanche SOA
3. Enhanced body diode dV/dt and dI/dt Capability
4. Lead Free
5. RoHS Compliant, Halogen-Free

Specifications:

1. Model IRFB4110
2. Brand Infineon
3. Transistor Type MOSFET
4. Type of Control Channel N-Type
5. Max. Drain-Source Voltage 100V
6. Max. Gate-Source Voltage 20V
7.  Continuous Drain Current, VGS @ 10V 130-180A
8. No. of Pins 3 pins
9. Pulsed Drain Current 670A
10. Max. Operating Junction Temperature 175°C
11. Rise Time 67ns
12. Peak Diode Recovery 5.3V
13. Max. Power Dissipation 370W
14. Package TO-220
15. Mounting Through Hole

Applications:

1. High Efficiency Synchronous Rectification in SMPS
2. Uninterruptible Power Supply
3. High Speed Power Switching
4. Hard Switched and High Frequency Circuits

Packing List:

1Pc * IRFB4110 100V 180A N-Channel Power MOSFET