FQPF8N60 600V 8A N-Channel MOSFET

The FQP8N60, FQPF-8N60, 8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

Features:

1. Drain Current –ID= 7.5A@ TC=25℃·
2. Drain Source Voltage-: VDSS= 600V(Min)·
3. Static Drain-Source On-Resistance: RDS(on) = 1.2Ω(Max)·
4. Avalanche Energy Specified
5. Fast Switching
6. Simple Drive Requirements

Packing List:

• 1Pc x FQPF8N60 600V 8A N-Channel MOSFET