FQP12N60C 600V 12A Power MOSFET

The FQP12N60C is a N-Chanel Power MOSFET 12A, 600V, 0.8Ω. 12N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Features:

• Type Designator: 12N60
• Type of 12N60 transistor: MOSFET
• Type of control channel: N -Channel
• Maximum power dissipation (Pd), W: 225
• Maximum drain-source voltage |Uds|, V: 600
• Maximum gate-source voltage |Ugs|, V: 30
• Maximum drain current |Id|, A: 12
• Maximum junction temperature (Tj), °C: 150
• Rise Time of 12N60 transistor (tr), nS: 115
• Drain-source Capacitance (Cd), pF: 200
• Maximum drain-source on-state resistance (Rds), Ohm: 0.6
• Package: TO-220 & TO-220F

Packing List:

• 1Pc x FQP12N60C 600V 12A Power MOSFET