FB9N60A 600V 9.2A N-Channel MOSFET

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching,  ruggedized device design,  low on-resistance and cost-effectiveness.

The  TO-220  package  is  universally  preferred  for  all  commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features:

1. Low gate charge Qg results in simple drive requirement
2. Improved gate, avalanche and dynamic dV/dt ruggedness
3. Fully characterized capacitance and avalanche voltage and current
4. Material categorization: for definitions of compliance

Packing List:

1Pc x FB9N60A 600V 9.2A N-Channel MOSFET