The 2N3906 Is 40V 200mA 625mW PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications
The 2N5401 TO-92 Bipolar Transistors PNP 160V 600mA. 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications, TO-92 Bipolar Transistors PNP 160V 600mA.
The 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23.
The 2N-5886, 2N5886G NPN Transistor, 25A, 80V, 2-Pin TO-204AA Package Manufactured By ON Semiconductor. Features: Collector-Emitter Volt (Vceo): 80V Collector-Base
The 2N6027 Programmable Unijunction Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values.
The 2SA1013, 2SA-1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.
The 2SA684, 2SA684-AP–Bipolar (BJT) Transistor PNP 50V 1A 200MHz 750mW Through Hole TO-92L. Pricing and Availability on 5000 almost of electronic components from BD-SpeedyTech.
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